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Anisotropic etching of silicon crystals in KOH solution

Part I Experimental etched shapes and determination of the dissolution slowness surface

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Abstract

The anisotropic etching behaviour of various crystalline silicon plates in an aqueous KOH solution was studied. Variations of the etch rate with the angle of cut related to singly-rotated plates have been determined and orientation effects in the out-of-roundness profiles related to various {h k 0} sections have been analysed in terms of crystal symmetry. In addition, changes in the surface texture with crystal orientation were systematically investigated. All the experimental results furnished evidence for a dissolution process governed by the crystal orientation. A procedure has been proposed to derive the dissolution slowness surface from experiments starting from a tensorial representation of the anisotropic etching.

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Authors and Affiliations

  1. Laboratoire de Chronométrie Electronique et Piézoélectricité, Ecole Nationale Supérieure de Mécanique et des Microtechniques, La Bouloie, Route de Gray, 25030, Besancon Cedex, France

    C. R. Tellier & A. Brahim-Bounab

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  1. C. R. Tellier
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  2. A. Brahim-Bounab
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Tellier, C.R., Brahim-Bounab, A. Anisotropic etching of silicon crystals in KOH solution. JOURNAL OF MATERIALS SCIENCE 29, 5953–5971 (1994). https://doi.org/10.1007/BF00366880

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