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Abstract

The growth of our knowledge in the properties of solids, namely, electronic spectra, electrical conductance, thermal and photochemical decompositions, elastic properties etc., has been closely associated with the growth of information on the defect state of solids. During the last forty years sufficient data have “been accumulated to prove an apparently simple statement “the more perfect a crystal is, the smaller is its reactivity. The seats of reactivity are found at those places where there is a defect or fault in the perfect order”1. The defects can be point defects, dislocations or stacking faults of atomc order or bulk defects originating from the misalignment of crystallites, the high angle grain boundaries or networks of dislocations in the crystallites. The defects of a atomic order are of extreme importance in controlling the mechanism of many reactions in solids« Mass transport which is the main process in most reactions is greately controlled by the nature and distribution of these defects.

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Yoganarasimhan, S.R. (1970). Solid State Reactions. In: Rao, C.N.R. (eds) Modern Aspects of Solid State Chemistry. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1875-0_19

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  • DOI: https://doi.org/10.1007/978-1-4684-1875-0_19

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