Abstract
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance (L) and quantum capacitance (C), which is about 100 GHz·μm divided by the gate length.
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Chauhan, J., Guo, J. Assessment of high-frequency performance limits of graphene field-effect transistors. Nano Res. 4, 571–579 (2011). https://doi.org/10.1007/s12274-011-0113-1
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DOI: https://doi.org/10.1007/s12274-011-0113-1