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Junction Parameters and Electrical Characterization of the Al/n-Si/Cu2CoSnS4/Au Heterojunction

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Abstract

Quaternary kesterite thin films of Cu2CoSnS4 were deposited on the n-Si substrate to fabricate Cu2CoSnS4/n-Si heterojunctions. The x-ray diffraction and field emission scanning electron microscopy were employed to study the structural properties of the Cu2CoSnS4 deposited on to n-Si single crystal substrate. The capacitance–voltage measurements of the Cu2CoSnS4/n-Si heterojunction were investigated to study the junction nature which displays an abrupt junction. The dark I–V characteristics of the Cu2CoSnS4/n-Si heterojunction displays a rectification behavior. We characterized the influence of the annealing temperature on the magnitudes of the diode parameters of the Cu2CoSnS4/n-Si heterojunction. The barrier height \( \phi_{\rm{b}} \) of the Cu2CoSnS4/n-Si heterojunction was increased with raising the annealing temperature while the ideality factor n has a reverse performance. The illuminated J–V plot of the Cu2CoSnS4/n-Si heterojunction displays an efficiency of 6.17% for the prepared junction.

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Authors and Affiliations

  1. Physics Division, Electron Microscope and Thin Films Department, National Research Centre, Dokki, Giza, 12622, Egypt

    I. M. El Radaf

  2. Materials Physics and Energy Laboratory, College of Sciences and Art at ArRass - Qassim University, ArRass, 51921, Kingdom of Saudi Arabia

    I. M. El Radaf

  3. Department of Physics, Faculty of Science, King Khalid University, Abha, Kingdom of Saudi Arabia

    H. I. Elsaeedy & H. A. Yakout

  4. Department of Material Science, Institute of Graduate Studies and Research, Alexandria University, Bab Sharqi, Egypt

    H. A. Yakout

  5. Chemical Industries Research Division, Applied Organic Chemistry Department, National Research Centre, 33 EL Buhouth St., Dokki, Giza, 12622, Egypt

    Mardia T. El Sayed

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  1. I. M. El Radaf
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  2. H. I. Elsaeedy
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  4. Mardia T. El Sayed
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El Radaf, I.M., Elsaeedy, H.I., Yakout, H.A. et al. Junction Parameters and Electrical Characterization of the Al/n-Si/Cu2CoSnS4/Au Heterojunction. J. Electron. Mater. 48, 6480–6486 (2019). https://doi.org/10.1007/s11664-019-07445-7

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