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Outgassing analysis of molecular glass photoresists under EUV irradiation

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Abstract

A device was designed and assembled to analyze the outgassing of molecular glass (MG) photoresists under extreme ultraviolet (EUV) exposure. The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl (t-Boc), photo-generated acid (PAG), and acid quencher was systematically investigated. Based on experiments, some solutions for reducing the outgassing of MG photoresists were proposed.

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Authors and Affiliations

  1. Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China

    Li Chen, Jian Xu, Hua Yuan, ShaYu Li, ShuangQing Wang & GuoQiang Yang

  2. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China

    ShuMin Yang, LianSheng Wang, YanQing Wu, Jun Zhao, Ming Chen, HaiGang Liu & RenZhong Tai

Authors
  1. Li Chen
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  2. Jian Xu
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  3. Hua Yuan
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  4. ShuMin Yang
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  5. LianSheng Wang
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  6. YanQing Wu
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  7. Jun Zhao
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  8. Ming Chen
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  9. HaiGang Liu
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  10. ShaYu Li
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  11. RenZhong Tai
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  12. ShuangQing Wang
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  13. GuoQiang Yang
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Corresponding authors

Correspondence to ShuangQing Wang or GuoQiang Yang.

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Chen, L., Xu, J., Yuan, H. et al. Outgassing analysis of molecular glass photoresists under EUV irradiation. Sci. China Chem. 57, 1746–1750 (2014). https://doi.org/10.1007/s11426-014-5122-y

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  • DOI: https://doi.org/10.1007/s11426-014-5122-y

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