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Enhanced stability and low operational voltage of resistive switching behavior in defect engineered LaMnO3 film

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Abstract

In this work, we have reported the colossal cyclic stability of oxygen-vacancy-rich LaMnO3 thin film resistive switching device synthesized by tuning the oxygen partial pressure within the pulsed laser deposition (PLD) chamber with suitably chosen non-inert electrode combination (Ag and ITO). Increasing profile of cyclic endurance even after 11,000 cycles was reported, which can facilitate the fabrication of sustainable device for neuromorphic computation. The base pressure synthesis and electrode materials also help to achieve low operational voltage window of  ± 1 V, with SET and RESET voltage as − 0.5 V and 0.8 V, respectively, which is the lowest compared to reports on previous PLD grown LaMnO3 thin films. The resistive switching is found to be of valance change memory (VCM) type, whereas the conduction mechanism is governed by space charge limited conduction (SCLC). Also, decrease in switching window for high oxygen pressure deposited film confirms crucial role of oxygen vacancy.

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Acknowledgements

The authors acknowledge Ministry of Human Resources and Development (MHRD), Government of India for support. Authors thank DST, Govt. of India, for the Research grant under sanction SR/FST/PS1/2018/34.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology Patna, Bihta, 801106, India

    Indranil Maity, A. K. Mukherjee & Ajay D. Thakur

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  1. Indranil Maity
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  2. A. K. Mukherjee
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Correspondence to Ajay D. Thakur.

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Maity, I., Mukherjee, A.K. & Thakur, A.D. Enhanced stability and low operational voltage of resistive switching behavior in defect engineered LaMnO3 film. Appl. Phys. A 129, 11 (2023). https://doi.org/10.1007/s00339-022-06265-7

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