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Photoluminescence of sol–gel-derived Y2O3:Eu3+ thin-film phosphors with Mg2+ and Al3+ co-doping

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Abstract

Red-light-emitting Y2O3:Eu3+ thin-film phosphors were synthesized using a sol–gel process. The effect of Mg2+ and Al3+ co-dopants on the Y2O3:Eu3+ thin-film phosphor photoluminescence (PL) property was investigated. At a certain concentration, both Mg2+ and Al3+ co-dopants were found to further enhance the PL emission intensity of Y2O3:Eu3+ thin-film phosphors. The optimum PL emission intensity was observed in Y2O3:12%Eu3+, 7%Mg2+ and Y2O3:12%Eu3+, 2%Al3+ phosphor films. From our results, the enhancement of the emission intensity by the Mg2+ and Al3+ co-dopants is explained in terms of the creation of defect states near the Y(4d+5s) conduction band, which overlap with the Eu3+ charge-transfer state (CTS). The overlapping leads to CTS broadening and consequently induces higher absorption and hence an increase of the emission intensity. From X-ray diffraction results, we have found that there is no additional phase formed in the co-doped phosphor films.

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Authors and Affiliations

  1. Photonics Laboratory 1, S1-B3a-08, Microelectronics Division, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798

    M.K. Chong, K. Pita & C.H. Kam

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  1. M.K. Chong
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  2. K. Pita
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  3. C.H. Kam
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Correspondence to M.K. Chong.

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PACS

68.55.Ln; 78.55.-m; 81.20.Fw

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Chong, M., Pita, K. & Kam, C. Photoluminescence of sol–gel-derived Y2O3:Eu3+ thin-film phosphors with Mg2+ and Al3+ co-doping. Appl. Phys. A 79, 433–437 (2004). https://doi.org/10.1007/s00339-004-2737-4

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