Abstract
0.94Na0.5Bi0.5TiO3–0.06BaTiO3 (NBT–6BT) and (0.94 − x)Na0.5Bi0.5TiO3–0.06BaTiO3–xBiFeO3 (NBT–6BT–xBFO, x = 0.03, 0.05 and 0.08) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel process. Relative permittivity and remnant polarization were maximized at 5 % BFO substitution. Compared with 0.94NBT–0.06BT, the leakage current density of 0.89NBT–0.06BT–0.05BFO at 600 kV/cm is reduced by one order of magnitude. Enhanced ferroelectricity was also achieved in 0.89NBT–0.06BT–0.05BFO, the remnant polarization (2P r) values of 0.89NBT–0.06BT–0.05BFO and 0.94NBT–0.06BT are 46 and 24 µC/cm2.
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Acknowledgments
This work was financially supported by Key Project of National Natural Science Foundation of China (NSFC; Grant No. 11032010), NSFC (Grant Nos. 61274107, and 61176093), 973 Program (Grant No. 2012CB326404), Key Project of Hunan Provincial NSFC (Grant No. 13JJ2023), Key Project of Scientific Research Fund of Hunan Provincial Education Department (Grant No. 12A129), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (ZHD201304). J. Ouyang would also like to thank the “Qi-Lu Young Scholar Fund” of Shandong University and the project sponsored by the Scientific Research Foundation (SRF) for the Returned Overseas Chinese Scholars, State Education Ministry (ROCS, SEM).
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Li, L.Q., Xiong, Y., Tang, M.H. et al. Effect of BiFeO3 doping on ferroelectric properties of Na0.5Bi0.5TiO3–BaTiO3 based thin film derived by sol–gel method. J Sol-Gel Sci Technol 72, 394–397 (2014). https://doi.org/10.1007/s10971-014-3448-8
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DOI: https://doi.org/10.1007/s10971-014-3448-8