Abstract
Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.
Similar content being viewed by others
References
Antonov P I, Bakholdin S I, Nosov Y G and Kalitina E S 1983Izv. Akad. Nauk SSSR 47 315
Benz K W and Muller G 1979J. Cryst. Growth 46 35
Brezina B and Fousek J 1989Crystal growth in science and technology (eds) H Arend and J Hulliger (New York: Plenum)1A p. 185
Buzynin A N, Antonov V A, Osiko V V and Tatarintsev V M 1988Izv. Akad. Nauk SSSR 52 1889
Capasso F, Panish M B, Sumski S and Foy P W 1980Appl. Phys. Lett. 36 165
Cockayne B, Steward V W, Brown G T, Mac Ewan W R and Young M L 1982J. Cryst. Growth 58 267
de Oliveira C E M and de Carvalho M M G 1995J. Cryst. Growth 151 9
Dresselhaus G, Kip A F, Kittel C and Wagoner G 1955Phys. Rev. 98 556
Dutta P S, Rao K S R K, Bhat H L and Vikram Kumar 1995Appl. Phys. A61 149
Edwards J T and Layne G S 1959J. Opt. Soc. Am. 49 414
Egan R J, Chin V W L and Tansley T L 1994Semicond. Sci. Technol. 9 1591
Etter D and Etter P J 1964J. Phys. Chem. Solids 25 451
Grandsen M 1958Electrochemical Society Meeting, New York (Unpublished work)
Harsy M, Gorog T, Lendvay E and Koltai F 1981J. Cryst. Growth 53 234
Hayakawa Y, Saitou Y, Sugimoto Y and Kumagawa M 1990J. Electron. Mater. 19 145
Heller M W and Hamerly R G 1985J. Appl. Phys. 57 4626
Helmer L, Schilz J, Bahr G and Kaysser W A 1995J. Cryst. Growth 154 266
Hildebrand O, Kuebart W, Benz K W and Philkuhn M H 1981IEEE J. Electron. QE-17 284
Hrostowski H, Morin F J, Gebalk T H and Wheatley G H 1955Phys. Rev. 100 1672
Jakowetz W, Ruhle W, Breuninger K and Pilkuhn M 1972Phys. Status Solidi(a) 12 169
Jamieson J C 1963Science 139 540
Kaiser R and Fan H Y 1965Phys. Rev. A138 156
Keys R W 1954Phys. Rev. 99 490
Kondo S and Miyazawa S 1982J. Cryst. Growth 56 39
Kozhemyakin G N 1995J. Cryst. Growth 149 266
Lee H J and Woolley J C 1981Can. J. Phys. 59 1844
Lee M, Nicholas D J, Singer K E and Hamilton B 1986J. Appl. Phys. 59 2895
Milnes A G and Polyakov A Y 1993Solid State Electron. 36 803
Moravec F 1993J. Cryst. Growth 128 457
Motosugi G and Kagawa T 1980Jpn. J. Appl. Phys. 19 2303
Muller G and Neumann G 1983J. Cryst. Growth 63 58
Munekata H, Mendez E E, Iye Y and Esaki L 1986Surf. Sci. 174 449
Nagao Y, Hariu T and Shibata Y 1981IEE Trans. Electron Devices ED28 407
Nicholas D J, Lee M, Hamilton B and Singer K E 1997J. Cryst. Growth 81 298
Roy U N and Basu S 1990Bull. Mater. Sci. 13 27
Santos P V, Sood A K, Cardona M, Ploog K, Ohmori Y and Okamoto M 1988Phys. Rev. B37 6381
Segawa K, Miki H, Otsubo M and Shirata K 1976Electron. Lett. 12 124
Sestakova V and Stepanek B 1995J. Cryst. Growth 146 87
Stepanek B and Sestakova V 1992Thermochim. Acta 209 285
Stepanek B, Sestakova V, Hubik P, Smid V and Charvat V 1993J. Cryst. Growth 126 617
Swaminathan V and Macrander AT 1991Material aspects of Haas and InP based structures (Englewood Cliffs, NJ: Prentice Hall) Ch. 5
van Maaren M H 1966J. Phys. Chem. Solids 27 472
van der Meulen Y J 1964Solid State Electron. 7 767
van Schilfgaarde M, Sher A and An-Ban Chen 1993Appl. Phys. Lett. 62 1857
van Welzenis R G and Ridley B K 1984Solid State Electron. 27 113
Xie H, Piao J, Katz J and Wang W I 1991J. Appl. Phys. 70 3152
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Udayashankar, N.K., Bhat, H.L. Growth and characterization of indium antimonide and gallium antimonide crystals. Bull Mater Sci 24, 445–453 (2001). https://doi.org/10.1007/BF02706714
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02706714