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Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

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Abstract

In this paper the advantages and drawbacks of rare earth-implanted MOS structures for optoelectronic applications are investigated. The discussion starts with a short overview of the electroluminescence properties and highlights the ambivalent role of hot electrons in these devises, namely the efficient excitation of rare earths ions and the efficient creation of defects. In addition, the defect shell model is addressed which explains the slight but continuous fading of the electroluminescence during device operation. Based on this, strategies for improving critical device parameters are discussed. The potential for voltage downscaling is not yet fully exploited but is generally limited by the extension of a dark zone in which the hot electrons do not yet have enough kinetic energy to excite rare earth ions. The most frequent strategies for enhancing the power efficiency comprise the increase of the excitation cross section by pumping via Si nanoclusters or via other rare earth ions. Finally, the discussion closes with the different possibilities to improve the operation lifetime, followed by a few remarks about potential applications.

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Acknowledgments

This chapter is the result of longstanding research activities involving many scientists contributing in many different ways. Special thanks go to F. Bregolin, C. Cherkouk, S. Germer, M. Helm, A. Kanjilal, J. Lehmann, A. Mrotzek, S. Prucnal, W. Skorupa, J.M. Sun, M. Voelskow, R. Wutzler and R.A. Yankov (presently or formerly at the Research Centre Dresden-Rossendorf); A. Nazarov, I.N. Osiyuk, I.P. Tjagulskii, and S. Tjagulskii (Nat. Academy of Science, Kyiv); C. Buchal and S. Mantl (Research Centre Jülich); H. Fröb and K. Leo (Technical University of Dresden); J. Biskupek and U. Kaiser (University of Ulm); Y. Berencén and B. Garrido (University of Barcelona). The authors also acknowledge the Rossendorf and Jülich Implantation Group for performing ion implantation, T. Schumann for flash lamp annealing and H. Hilliges, C. Neisser and G. Schnabel for their careful semiconductor preparation work.

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  1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden, Rossendorf, Bautzner Landstraße 400, 01328, Dresden, Germany

    Lars Rebohle

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  1. Lars Rebohle
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Correspondence to Lars Rebohle .

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Editors and Affiliations

  1. National Academy of Science of Ukraine, Lashkaryov Institute of Semiconductor Physics, Kyiv, Ukraine

    Alexei Nazarov

  2. Sinano InstituteIMEP-LAHC, CNRS Grenoble, IMEP-LAHC, Grenoble, France

    Francis Balestra

  3. ICTEAM Institute Microelectronics Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Valeriya Kilchytska

  4. ICTEAM Institute, ELEN (Electrical Engineering), Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

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Rebohle, L. (2014). Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications. In: Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D. (eds) Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-08804-4_16

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