High-power mode-locked operation of Yb-doped NaY(WO4)2 end-pumped by laser diodes

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Published 2 June 2008 • Published under licence by IOP Publishing Ltd
, , Citation H Luo et al 2008 Laser Phys. Lett. 5 651 DOI 10.1002/lapl.200810046

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Author affiliations

1 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

2 National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

3 College of Environment and Material Engineering, Yantai University, Yantai 264005, China

4 Research Facility for Advanced Materials, State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

Dates

  1. Received 18 April 2008
  2. Accepted 5 May 2008
  3. Published

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Abstract

Passively cw mode-locked laser operation of Yb-doped NaY(WO4)2 (Yb:NaYW) crystal was demonstrated with an average power of 400 mW. This is the highest power achieved from the mode-locked Yb:NaYW laser to our knowledge. The laser was end-pumped by a high power fiber pigtailed laser diode bar and the mode-locking was enabled by a semiconductor saturable absorber mirror (SESAM). The laser pulse duration was 1.1 ps, centered at the wavelength of 1019.7 nm with a bandwidth of 1.6 nm, and nearly transform-limited.

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10.1002/lapl.200810046