Issue 34, 2015

Mn2+-doped Zn–In–S quantum dots with tunable bandgaps and high photoluminescence properties

Abstract

In the present work, we reported the synthesis of Mn2+-doped Zn–In–S quantum dots (QDs) with high optical performance in a controlled manner. The effects of the temperature, the introduced ODE-S amount and Zn/In ratios in the raw materials, as well as the Mn2+ doping concentrations on the photoluminescence (PL) properties of Mn2+-doped Zn–In–S QDs were investigated systematically. The resultant QDs exhibit tunable bandgaps ranging from 2.9 to 3.7 eV, well-resolved Mn2+ d–d emission with a PL quantum yield (QY) of 56% and a surprisingly long excited state lifetime up to ∼4.2 ms, suggesting their excellent PL properties. Meanwhile, the initial high PL QY of the obtained Mn2+-doped Zn–In–S QDs in organic solvents could be preserved very well once they were transferred into aqueous media via ligand exchange. Furthermore, the as-synthesized QDs exhibit excellent thermal stability up to 200 °C in a crude solution.

Graphical abstract: Mn2+-doped Zn–In–S quantum dots with tunable bandgaps and high photoluminescence properties

Supplementary files

Article information

Article type
Paper
Submitted
14 May 2015
Accepted
17 Jul 2015
First published
20 Jul 2015

J. Mater. Chem. C, 2015,3, 8844-8851

Mn2+-doped Zn–In–S quantum dots with tunable bandgaps and high photoluminescence properties

S. Cao, J. Zhao, W. Yang, C. Li and J. Zheng, J. Mater. Chem. C, 2015, 3, 8844 DOI: 10.1039/C5TC01370D

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