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Preparation of Large Area NbN/AlN/NbN Josephson Junctions

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Copyright (c) 1987 The Japan Society of Applied Physics
, , Citation S. N. Song et al 1987 Jpn. J. Appl. Phys. 26 1615 DOI 10.7567/JJAPS.26S3.1615

1347-4065/26/S3-2/1615

Abstract

AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I–V and first derivative curves yield a sum gap value of about 3.0 meV.

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10.7567/JJAPS.26S3.1615