Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method

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Published 15 November 2011 • Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Akira Nagaoka et al 2011 Jpn. J. Appl. Phys. 50 128001 DOI 10.1143/JJAP.50.128001

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Author affiliations

1 Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

2 Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

3 Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

Dates

  1. Received 18 May 2011
  2. Accepted 4 September 2011
  3. Published

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Abstract

A Cu2ZnSnS4 (CZTS) single crystal was grown at 900 °C, which is less than its melting point (962 °C) using a traveling heater method, which is one of the solution growth methods. No twins and no secondary phases could be distinguished from the Laue and X-ray diffraction patterns, respectively.

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