Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells

, , , , , , , , , , , , , , and

Published 22 November 2013 Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Santiago Silvestre et al 2013 Jpn. J. Appl. Phys. 52 122302 DOI 10.7567/JJAP.52.122302

1347-4065/52/12R/122302

Abstract

In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.

Export citation and abstract BibTeX RIS

10.7567/JJAP.52.122302