Brought to you by:

Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O3 Films on (100)Si Substrates

, , , , , , , , and

Published 21 March 2013 • Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Takahiro Oikawa et al 2013 Jpn. J. Appl. Phys. 52 04CH09 DOI 10.7567/JJAP.52.04CH09

Download Article PDF

Article metrics

191 Total downloads

Share this article

Author affiliations

1 Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan

2 Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan

3 Asylum Technology Co., Ltd., Bunkyo, Tokyo 113-0034, Japan

4 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan

Dates

  1. Received 22 September 2012
  2. Accepted 26 November 2012
  3. Published

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/52/4S/04CH09

Abstract

Films of a high-pressure perovskite phase, Bi(Mg1/2Ti1/2)O3, were prepared on (111)c-oriented SuRuO3-coated (111)Pt/TiO2/SiO2/(100)Si substrates. The perovskite Bi(Mg1/2Ti1/2)O3 films had a (111) one-axis orientation, because their constituent grains were epitaxially grown on (111)c-oriented perovskite SrRuO3 ones. The remanent polarization and piezoelectric constant measured at an applied electric field of 600 kV/cm were about 30 µC/cm2 and 40 pm/V, respectively. A remarkable phase transition was not observed from room temperature to 350 °C in a (111) one-axis-oriented Bi(Mg1/2Ti1/2)O3 film, suggesting that the Curie temperature of this film is above 350 °C.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
Please wait… references are loading.
10.7567/JJAP.52.04CH09