Passively Q-Switched Intracavity BaTeMo2O9 Raman Laser

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Published 7 May 2013 • ©2013 The Japan Society of Applied Physics
, , Citation Liang Gao et al 2013 Appl. Phys. Express 6 052703 DOI 10.7567/APEX.6.052703

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1 School of Information Science & Engineering and Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, P. R. China

2 Advanced Research Center for Optics, Shandong University, Jinan 250100, P. R. China

3 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Dates

  1. Received 27 March 2013
  2. Accepted 16 April 2013
  3. Published

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Abstract

A diode-end-pumped passively Q-switched intracavity Raman laser at 1179 nm is obtained with the BaTeMo2O9 nonlinear Raman crystal for the first time. With an incident pump power of 12.3 W, the average output power of 1179 nm is obtained to be 0.41 W. The pulse repetition rate is measured to be 24 kHz and the pulse width is 5.2 ns. The beam quality factors (M2) in the horizontal and vertical directions are determined to be 1.5±0.1 and 2.0±0.1, respectively.

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10.7567/APEX.6.052703