A monolithic HEMT distributed amplifier using a low cost spacer technology

Siweris, Heinz J. ; Grave, Thomas ; Schleicher, Lothar (1994) A monolithic HEMT distributed amplifier using a low cost spacer technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
Full text disponibile come:
[thumbnail of GAAS_94_027.pdf]
Anteprima
Documento PDF
Download (951kB) | Anteprima

Abstract

The design, fabrication, and performance of a monolithic HEMT distributed amplifier are described. Over the 0.5 -30 GHz frequency range a gain of 9.5 ±0.7 dB has been achieved. The HEMT gate process is based on a spacer technology without using electron beam lithography. Thus, the process is suitable for high volume low cost production of HEMT MMICs.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Siweris, Heinz J.
Grave, Thomas
Schleicher, Lothar
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^