An improved C-V model of GaAs MESFETs for CAD of high speed circuits and broadband amplifiers

Giorgio, Agostino ; Perri, Anna Gina (1997) An improved C-V model of GaAs MESFETs for CAD of high speed circuits and broadband amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

In this paper a semiempirical capacitance model of GaAs FET, very useful for CAD of MMIC, is proposed. The model fits the results of two dimensional (2-D) simulations of device behaviour, accounting for the most important microwave effects, by means of the determination of an effective shape of the depletion region in the active channel. Simple physical equations and a few effective empirical parameters, with a precise physical meaning, are employed. So the initial estimation of parameters and their extraction procedure result to be very easy. In spite of its semiempirical nature the model does not leave the control over physical and technological device parameters to circuit designer, necessary to achieve a reliable design. The model usefulness and accuracy are experimentally confirmed to be very satisfactory for different kinds of MESFETs.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Giorgio, Agostino
Perri, Anna Gina
Settori scientifico-disciplinari
DOI
Data di deposito
01 Dic 2005
Ultima modifica
17 Feb 2016 14:24
URI

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