A high-efficiency HBT-based class-E power amplifier for 2 GHz

Milosevic, Dusan ; van der Tang, Johan ; van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-Ohm input and output match and is capable of high-efficiency power amplification of constant-envelope signals, which has been demonstrated with the GMSK signal. Both lumped- and distributed-components concepts for the practical implementation of the load network are presented and discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Milosevic, Dusan
van der Tang, Johan
van Roermund, Arthur
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:20
URI

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