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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-18290
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1829
Zusammenfassung
A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors ...
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