CERN Accelerating science

Article
Report number arXiv:1607.01578 ; arXiv:1607.01578
Title Thermal Design of Power Electronic Circuits
Author(s) Künzi, R. (PSI, Villigen)
Imprint 2016-07-06. - 17 p.
Note 17 pages, contribution to the 2014 CAS - CERN Accelerator School: Power Converters, Baden, Switzerland, 7-14 May 2014
In: CAS - CERN Accelerator School: Power Converters, pp.311-327
DOI 10.5170/CERN-2015-003.311
Subject category Accelerators and Storage Rings
Abstract The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred to the environment in order to prevent overheating or even destruction of the element. For a cost-effective design, the semiconductors should be operated close to their thermal limits. Unfortunately the chip temperature cannot be measured directly. Therefore a detailed understanding of how losses arise, including their quantitative estimation, is required. Furthermore, the heat paths to the environment must be understood in detail. This paper describes the main issues of loss generation and its transfer to the environment and how it can be estimated by the help of datasheets and/or experiments.
Copyright/License publication: © 2015-2024 CERN (License: CC-BY-4.0)

Corresponding record in: Inspire


 Record created 2015-07-29, last modified 2022-08-10


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