Fabrication of Passive Thin Film Capacitor by Using Semiconductor Technology

Ichiro KOIWA; Kinya ASHIKAGA; Makoto TERUI; Yasushi SHIRAISHI; Noritaka ANZAI; Takashi OHSUMI; Tetsuya OSAKA; Tomoya KUMAGAI; Yoshimi SATO; Akira HASHIMOTO

doi:10.5104/jiep.8.517

Ichiro KOIWA, Kinya ASHIKAGA, Makoto TERUI, Yasushi SHIRAISHI, Noritaka ANZAI, Takashi OHSUMI, Tetsuya OSAKA, Tomoya KUMAGAI, Yoshimi SATO, Akira HASHIMOTO

Author information

Ichiro KOIWA
Device R&D Department, Silicon Solution Company, Oki Electric Industry Co., Ltd.
Kinya ASHIKAGA
Device R&D Department, Silicon Solution Company, Oki Electric Industry Co., Ltd.
Makoto TERUI
ATP Business Division, Silicon Manufacturing Company, Oki Electric Industry Co., Ltd.
Yasushi SHIRAISHI
ATP Business Division, Silicon Manufacturing Company, Oki Electric Industry Co., Ltd.
Noritaka ANZAI
ATP Business Division, Silicon Manufacturing Company, Oki Electric Industry Co., Ltd.
Takashi OHSUMI
ATP Business Division, Silicon Manufacturing Company, Oki Electric Industry Co., Ltd.
Tetsuya OSAKA
Department of Applied Chemistry, School of Science and Engineering, Waseda University
Tomoya KUMAGAI
Research & Development Department, Tokyo Ohka Kogyo Co., Ltd.
Yoshimi SATO
Research & Development Department, Tokyo Ohka Kogyo Co., Ltd.
Akira HASHIMOTO
Research & Development Department, Tokyo Ohka Kogyo Co., Ltd.

Keywords: Thin Film Capacitor, Passive, Semiconductor Process Technology, Barium Strontium Titanium Oxide (BST) , Strontium Bismath Tantalum Oxide (SBT)

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2005 Volume 8 Issue 6 Pages 517-522

DOI https://doi.org/10.5104/jiep.8.517

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Abstract

Recently, there has been a strong demand for smaller electronic devices with improved. About 60% of the area is occupied by the passive components for packaging. To overcome this limitation, an embedded capacitor was prepared using semiconductor technologies and the process technology of ferroelectric random access memories. Eight micro capacitors were prepared in a 2 mm² area. Two types of high dielectric constant material were used. The first one is Barium Strontium Titanium oxide (BST) for focusing high capacitance with high loss, and the other is Strontium Bismath Tantalum oxide (SBT) for focusing low loss with medium capacitance. The micro capacitor with BST, whose dielectric constant (ε) was 350, showed about 3200pF at 0 bias and its loss, tan δ, was a little lower than 0.01. The one with SBT, whose ε was 51, showed 470 pF, and its tan δ was about 0.001. It is concluded that micro capacitors with the requested characteristics were prepared.

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