This study investigated the influence of stacking sequences in the formation of deleterious secondary phases which has degrading effects on the performance of Cu2ZnSnS4 (CZTS) thin film solar cells. Various stacking of absorber layer precursors for e.g. Zn/Sn/Cu, Sn/Zn/Cu, Cu/Zn/Sn/Cu and Cu/Sn/Zn/Cu are prepared on glass substrates without heating using electron beam evaporation of elemental metallic precursors. Interdiffusion of metals is confirmed from the XRD results. Further, the precursor films are sulfurized at 500°C for 1 hr in the presence of elemental sulfur powder having N2 as the carrier gas. The effect of ramping rates on the formation of secondary phases are investigated using XRD and Raman spectroscopy. It is found that precursor stacking sequence of Sn/Zn/Cu sulfurized at a rate of 1°C/min and Cu/Sn/Zn/Cu at a sulfurization ramping rate of 1°C/min are the optimum condition for the formation of phase pure CZTS thin films.