Title | In-Situ and Ex-Situ Characterization of III-V Semiconductor Materials and Solar Cells Upon 10 MeV Proton Irradiation |
Author(s) | E. Yaccuzzi, Enrique Barrigón, Sebastian Rodríguez, Mario Ochoa, Marcela Barrera, Pilar Espinet González, Javier García, Maria Lujan Ibarra, Hernan Socolovsky, María Dolores Perez, Paula Giudici, Martín Alurralde, Carlos Algora, Ignacio Rey-Stolle, Juan Plá |
Keywords | Multijunction Solar Cell, Radiation Damage, III-V Semiconductors |
Topic | MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY |
Subtopic | Solar Cells, Modules and PV Systems for Space Applications |
Event | 28th EU PVSEC |
Session | 1CV.6.1 |
Pages manuscript | 526 - 530 |
ISBN | 3-936338-33-7 |
DOI | 10.4229/28thEUPVSEC2013-1CV.6.1 |
In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.