Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
p.1439
p.1439
Positron Beam Studies on Cadmium Mercury Telluride
p.1443
p.1443
Positron Beam Measurements on Hydrogen Implanted Silicon
p.1447
p.1447
Characterisation of an SiO2/Si Interface with Slow Positrons
p.1451
p.1451
Positron Lifetimes on Clean Metallic Surfaces
p.1455
p.1455
Investigation of Near Surface Defects by Variable-Energy Positron Lifetime Spectroscopy
p.1459
p.1459
Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam
p.1463
p.1463
Study of Oxygen Atom Clustering in Si Induced by External Stress by Means of a Monoenergetic Positron Beam
p.1467
p.1467
Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
p.1471
p.1471
Positron Lifetimes on Clean Metallic Surfaces
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 105-110)
Pages:
1455-1458
Citation:
Online since:
January 1992
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