Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique

Alvars Kjapsna; Lauris Dimitrocenko; Ivars Tale; Anatoly Trukhin; Reinis Ignatans; Rolands Grants

doi:10.4028/www.scientific.net/KEM.721.253

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 721Characterization of Crystalline Structure and...

Characterization of Crystalline Structure and Morphology of Ga₂O₃ Thin Film Grown by MOCVD Technique

Abstract:

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H₂ and N₂. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga₂O₃. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H₂ gas proved to have beneficial effect on film quality and overall growth process.

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Periodical:

Key Engineering Materials (Volume 721)

Pages:

253-257

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.721.253

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Online since:

December 2016

Authors:

Alvars Kjapsna*, Lauris Dimitrocenko, Ivars Tale, Anatoly Trukhin, Reinis Ignatans, Rolands Grants

Keywords:

Crystal Structure, Gallium Oxide, MOCVD, Sapphire, Trimethylgallium, Water

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