Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells

Dilara Gokcen Buldu; Jessica de Wild; Thierry Kohl; Sunil Suresh; Gizem Birant; Guy Brammertz; Marc Meuris; Jef Poortmans; Bart Vermang

doi:10.4028/www.scientific.net/SSP.282.300

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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Wet Processing in State-of-the-Art...

Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)₂ Thin Film Solar Cells

Abstract:

Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se₂ (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

300-305

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.300

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Online since:

August 2018

Authors:

Dilara Gokcen Buldu*, Jessica de Wild, Thierry Kohl, Sunil Suresh, Gizem Birant, Guy Brammertz, Marc Meuris, Jef Poortmans, Bart Vermang

Keywords:

CIGS, Passivation, Photovoltaic, PV, Surface Cleaning, Surface Etching, Thin Film, Wet Processing

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* - Corresponding Author

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