A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

Hui Wang; Ling Li Jiang; Ning Wang; Hong Yu Yu; Xin Peng Lin

doi:10.4028/www.scientific.net/MSF.913.870

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HomeMaterials Science ForumMaterials Science Forum Vol. 913A Charge Storage Based Enhancement Mode AlGaN/GaN...

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

Abstract:

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (V_th) are simulated systematically. It is found that the V_thincreases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the V_thcan be increased to more than 2 V. Moreover, It is also found that the V_th increases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

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Periodical:

Materials Science Forum (Volume 913)

Pages:

870-875

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.913.870

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Online since:

February 2018

Authors:

Hui Wang, Ling Li Jiang, Ning Wang, Hong Yu Yu*, Xin Peng Lin

Keywords:

Charge Storage, Enhancement Mode, GaN, HEMT

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* - Corresponding Author

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