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HomeMaterials Science ForumMaterials Science Forum Vol. 898Power-Efficient Phase Change Memory Using Silicon...

Power-Efficient Phase Change Memory Using Silicon Carbide as a Buffer Layer

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Abstract:

Power consumption has long been a great obstacle in phase change memory technology. Silicon carbide was introduced to be a buffer layer between the phase change material and the metal electrode in this work. The results showed that the new structure mitigated the energy consumption and maintained the advantage of high speed. This is attributed to the thin SiC buffer layer that helps confine the generated Joule heat inside the active phase change volume and form more conducting paths by the high efficiency of the heat utilization. Additionally, another key role — inhibition of the material separation, is conducive to achieving stable and sustainable electrical operations.

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IUMRS International Conference in Asia

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Periodical:

Materials Science Forum (Volume 898)

Pages:

1812-1816

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.898.1812

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Online since:

June 2017

Authors:

Tian Qi Guo*, San Nian Song, Le Li, Lan Lan Shen, Shi Long Lv, Bo Liu, Liang Cai Wu, Zhi Tang Song, Ming Qi, Song Lin Feng

Keywords:

Electrical Properties, Nanocomposite, Phase Change Memory (PCM), SiC

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* - Corresponding Author

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