Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.238
p.238
New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization
p.242
p.242
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes
p.246
p.246
New Evidence for the Second Conduction Band in 4H SiC
p.250
p.250
On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
p.254
p.254
Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
p.258
p.258
Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
p.262
p.262
Density Functional Theory on NV Center in 4H SiC
p.269
p.269
Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
p.275
p.275
On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
Abstract:
Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.
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Info:
Periodical:
Materials Science Forum (Volume 897)
Pages:
254-257
Citation:
Online since:
May 2017
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