Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Philipp Schuh; Philipp Vecera; Andreas Hirsch; Mikael Syväjärvi; Grazia Litrico; Francesco La Via; Marco Mauceri; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.858.89

Paper Titles

Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73

Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77

Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81

Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli
p.93

Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
p.97

Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
p.101

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
p.105

HomeMaterials Science ForumMaterials Science Forum Vol. 858Physical Vapor Growth of Double Position Boundary...

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Abstract:

We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich related technique. The seeding layers were removed from the silicon carrier using a solution of hydrogen fluoride, nitric acid and water and glued to a substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, DPBs free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.89

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Online since:

May 2016

Authors:

Philipp Schuh*, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann

Keywords:

3C-SiC, DPBs Free, Quasi-Bulk, Seed Stabilization, Seed Transfer, Seeded Sublimation Epitaxy

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