Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

Hong Tao Zhao; Yi Qiao Shi; Min Tian

doi:10.4028/www.scientific.net/MSF.852.1066

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HomeMaterials Science ForumMaterials Science Forum Vol. 852Investigation on the Effect of the Substrate...

Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

Abstract:

The Ga doped ZnO film (GZO) was fabricated via magnetron sputtering on the substrate of silica glass. The effect of substrate temperature on the photoelectric properties of GZO film, such as morphology, grain size, crystal structure and transparency was studied. The results showed us that the crystallinity of GZO film was improved by increasing the substrate temperature . The GZO film exhibited high transmittance (above 80% in the visible region) at the substrate temperature higher than 200°C. The lowest resistivity of 4.45×10-4Ω·cm and highest hall mobility of 11.7 cm2 v-1s-1 were obtained when the substrate temperature was 300°C.

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Periodical:

Materials Science Forum (Volume 852)

Pages:

1066-1069

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.852.1066

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Online since:

April 2016

Authors:

Hong Tao Zhao, Yi Qiao Shi, Min Tian

Keywords:

Ga Doppend ZnO, Magnetron Sputtering, Substrate Temperature

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