Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs

Kensaku Yamamoto; Sauvik Chowdhury; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.821-823.713

Paper Titles

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
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Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
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Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments
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Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs
p.709

Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
p.713

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
p.717

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
p.721

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator
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Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Study of Mobility Limiting Mechanisms in (11-20)...

Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs

Abstract:

NO annealed Lateral (11-20) MOSFETs were fabricated and mobility limiting mechanisms were investigated by MOS-gated Hall measurements, impedance analysis of MOS capacitor and so on. We have clarified that about 1×10¹² cm^-2 of inversion electrons are trapped at the interface and mobility is largely limited by Coulombic scattering. We attribute that the Coulombic scattering is caused by electrons trapped at interface states and positive fixed charges, which might be due to donor-like states.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

713-716

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.713

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Online since:

June 2015

Authors:

Kensaku Yamamoto*, Sauvik Chowdhury, T. Paul Chow

Keywords:

Conductance Method, Coulombic Scattering, Hall Measurement, Interface State Density, Mobility

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* - Corresponding Author

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