Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Tomasz Sledziewski; Svetlana Beljakowa; Kassem Alassaad; Pawel Kwasnicki; Roxana Arvinte; Sandrine Juillaguet; Marcin Zielinski; Véronique Soulière; Gabriel Ferro; Heiko B. Weber; M. Krieger

doi:10.4028/www.scientific.net/MSF.778-780.261

Paper Titles

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere
p.243

A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures
p.247

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
p.251

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition
p.255

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
p.261

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
p.265

Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC
p.269

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
p.273

Identification of Structures of the Deep Levels in 4H-SiC
p.277

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of Ge-Doped Homoepitaxial Layers...

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Abstract:

We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.261

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Online since:

February 2014

Authors:

Tomasz Sledziewski*, Svetlana Beljakowa, Kassem Alassaad, Pawel Kwasnicki, Roxana Arvinte, Sandrine Juillaguet, Marcin Zielinski, Véronique Soulière, Gabriel Ferro, Heiko B. Weber, M. Krieger

Keywords:

Admittance Spectroscopy, DLTS, Ge-Doping, Hall Effect, Hall Mobility

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