Silicon Carbide Transistors for IC Design Applications up to 600 °C

Ayden Maralani; Wei Cheng Lien; Nuo Zhang; A.P. Pisano

doi:10.4028/www.scientific.net/MSF.778-780.1126

Paper Titles

High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
p.1110

Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices
p.1114

Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages
p.1118

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
p.1122

Silicon Carbide Transistors for IC Design Applications up to 600 °C
p.1126

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
p.1130

Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination
p.1137

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
p.1142

Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC
p.1146

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Silicon Carbide Transistors for IC Design...

Silicon Carbide Transistors for IC Design Applications up to 600 °C

Abstract:

Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or circuits have been able to survive in that temperature range. In power electronics applications, existence of low power SiC devices and IC technologies will significantly aid the development of high power density power modules in which total weights and cooling systems sizes are reduced. This paper will be evaluating the performances of the fabricated low power SiC device candidates (JFET and BJT) for SiC-based analog ICs design for high temperature and power electronics applications.