Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
p.873
p.873
Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877
p.877
Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881
p.881
Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
p.887
p.887
Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
p.891
p.891
16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
p.895
p.895
SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
p.899
p.899
Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
p.903
p.903
Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
p.907
p.907
Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
Abstract:
The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
891-894
Citation:
Online since:
January 2013
Keywords:
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