Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Heiji Watanabe; Daisuke Ikeguchi; Takashi Kirino; Shuhei Mitani; Yuki Nakano; Takashi Nakamura; Takuji Hosoi; Takayoshi Shimura

doi:10.4028/www.scientific.net/MSF.740-742.741

Paper Titles

Effect of NH₃ Post-Oxidation Annealing on Flatness of SiO₂/SiC Interface
p.723

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl₃ Annealing
p.727

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.733

Effect of Suppressing Reoxidation at SiO₂/SiC Interface during Post-Oxidation Annealing in N₂O with Al₂O₃ Capping Layer
p.737

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
p.741

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
p.745

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO₂/4H-SiC Interface
p.749

The Influence of Post-Oxidation Annealing Process in O₂ and N₂O on the Quality of Al/SiO₂/n-Type 4H-SiC MOS Interface
p.753

Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps
p.757

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Novel Approach for Improving Interface Quality of...

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Abstract:

We report on the harmful impact of ultraviolet (UV) light irradiation on thermally grown SiO2/4H-SiC(0001) structures and its use in subsequent thermal annealing for improving electrical properties of SiC-MOS devices. As we previously reported [1], significant UV-induced damage, such as positive flatband voltage shift and hysteresis in capacitance-voltage curves as well as increased interface state density, was observed for SiC-MOS devices with thermally grown oxides. Interestingly, the subsequent annealing of damaged SiO2/SiC samples resulted in superior electrical properties to those for untreated (fresh) devices. These findings imply that UV irradiation of the SiO2/SiC structure is effective for eliciting pre-existing carbon-related defects and transforming them into a simple configuration that can be easily passivated by thermal treatment.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

741-744

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.741

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Online since:

January 2013

Authors:

Heiji Watanabe, Daisuke Ikeguchi, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura

Keywords:

Carbon-Related Defect, Interface State Density (D_it), MOS Device, UV-Induced Damage

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