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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Improved Stability of 4H-SiC MOS Device Properties...

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl₃ Annealing

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Abstract:

Effects of combination of NO and POCl₃ annealing on electrical properties and their stability of 4H-SiC MOS capacitors and MOSFETs were investigated. Channel mobility of MOSFETs processed with both NO and POCl₃ annealing did not exceed that of POCl₃ annealed MOSFETs. As for the stability of flat-band voltage and threshold voltage using a constant field stress test, the combined annealed sample indicated very stable characteristics compared with single annealed devices with NO or POCl₃. The reason for obtaining stable electrical properties is discussed based on nitridation and phosphorization effects at the interface.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

727-732

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.727

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Online since:

January 2013

Authors:

Hiroshi Yano, Tsuyoshi Araoka, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

MOS, NO Annealing, POCl₃ Annealing, Threshold Voltage Instability

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