10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Lin Dong; Guo Sheng Sun; Jun Yu; Guo Guo Yan; Wan Shun Zhao; Lei Wang; Xin He Zhang; Xi Guang Li; Zhan Guo Wang

doi:10.4028/www.scientific.net/MSF.740-742.239

Paper Titles

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
p.221

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth
p.225

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
p.229

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
p.235

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
p.239

Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
p.243

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
p.257

HomeMaterials Science ForumMaterials Science Forum Vols. 740-74210 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall...

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Abstract:

We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers grown by this high-throughput reactor show specular surfaces and good uniformities of thickness and doping. The intra-wafer and wafer-to-wafer thickness uniformities are 2.0% and 0.5%, respectively, while intra-wafer and wafer-to-wafer doping uniformities are 14.0% and 3.4%, respectively. The obtained surface RMS roughness is 0.2 nm. These results suggest that this 10 × 100 mm warm-wall planetary reactor provides very promising prospect on the mass production of 4H-SiC epilayers, which will further promote the development of SiC-based electronic devices.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

239-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.239

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Online since:

January 2013

Authors:

Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang

Keywords:

4H-SiC, Epitaxial Growth, Multi-wafer, Planetary Reactor, Warm-Wall

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