Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

Ji Chul Jung; Ji Hong Kim; Kang Min Do; Byung Moo Moon; Sung Jae Joo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim; Sang Mo Koo

doi:10.4028/www.scientific.net/MSF.717-720.1327

Paper Titles

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage
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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
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Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
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Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
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Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
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Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
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Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode
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Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC
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CdGeN₂ and ZnGe_0.5Sn_0.5N₂: Two New Nitride Semiconductors with Band Gaps in the Blue-Green
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Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

Abstract:

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.