Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

Tawhid Rana; Hai Zheng Song; M.V.S. Chandrashekhar; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.717-720.117

Paper Titles

4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)
p.101

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
p.105

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
p.109

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
p.113

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
p.117

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
p.121

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
p.129

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications
p.133

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Comparison of 4H Silicon Carbide Epitaxial Growths...

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

Abstract:

SiC epitaxial films grown in an inverted chimney CVD reactor using silane-propane-hydrogen and dichlorosilane (DCS)-propane-hydrogen systems are compared for growth rates and doping concentrations at various growth pressures. Parasitic depositions in the gas injector tube using these precursor gases are also compared for precursor depletion. Virtual Reactor, a commercial software, is employed to predict growth rates and compare them to experimental results for the same growth conditions using DCS and silane gases.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

117-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.117

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Online since:

May 2012

Authors:

Tawhid Rana, Hai Zheng Song, M.V.S. Chandrashekhar, Tangali S. Sudarshan

Keywords:

Dichlorosilane, Silane, Silicon Carbide Epitaxy, Simulation

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