Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

Stefano Leone; Henrik Pedersen; Franziska Christine Beyer; Sven Andersson; Olof Kordina; Anne Henry; Andrea Canino; Francesco La Via; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.113

Paper Titles

Epitaxial Growth of 4H-SiС Using Si₂(CH₃)₆+Si₂Cl₆+C₃H₈+H₂ System by Atmospheric Pressure Hot CVD Method
p.97

4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)
p.101

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
p.105

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
p.109

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
p.113

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
p.117

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
p.121

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
p.125

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
p.129

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Chloride-Based CVD of 4H-SiC at High Growth Rates...

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

Abstract:

A review of recently achieved results with the chloride-based CVD on 8° and 4° off axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 µm/h or more. A fine-tuning of process parameters mainly temperature, C/Si ratio and in situ surface preparation is necessary for each off-angle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

113-116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.113

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Online since:

May 2012

Authors:

Stefano Leone, Henrik Pedersen, Franziska Christine Beyer, Sven Andersson, Olof Kordina, Anne Henry, Andrea Canino, Francesco La Via, Erik Janzén

Keywords:

Chloride-Based CVD, High Growth Rate, Homoepitaxial Growth, Substrate Off-Angle

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