Observations on C-Face SiC Graphene Growth in Argon

D. Kurt Gaskill; Jennifer K. Hite; James C. Culbertson; Glenn G. Jernigan; Joseph L. Tedesco; Luke O. Nyakiti; Virginia D. Wheeler; Rachael L. Myers-Ward; N.Y. Garces; Charles R. Eddy

doi:10.4028/www.scientific.net/MSF.679-680.789

Paper Titles

Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface
p.769

The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
p.777

Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
p.781

High Temperature Graphene Formation on Capped and Uncapped SiC
p.785

Observations on C-Face SiC Graphene Growth in Argon
p.789

Influence of Intercalated Silicon on the Transport Properties of Graphene
p.793

Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
p.797

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
p.801

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
p.804

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Observations on C-Face SiC Graphene Growth in...

Observations on C-Face SiC Graphene Growth in Argon

Abstract:

The growth of epitaxial graphene on C-face 6H-SiC substrates is investigated using pro-cess conditions that can form small, local areas of graphene. The thickness of SiC lost to Si sublimation is not completely countered by the thickness of the resulting graphene and so graphene-covered basins (GCBs) are formed. The GCBs are most likely nucleated at threading dislocations from the substrate. The GCB morphology exhibits ridges, similar to those found on continuous films. The GCBs expand through erosion of the surrounding SiC substrate walls, eventually coalescing into continuous films. The ratio of the Raman D and G peaks was used to estimate the crystallite length scale and it was found to be about 200 nm for small GCBs and > 1 m for continuous films.

You might also be interested in these eBooks

View Preview

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

789-792

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.789

Citation:

Cite this paper

Online since:

March 2011

Authors:

D. Kurt Gaskill, Jennifer K. Hite, James C. Culbertson, Glenn G. Jernigan, Joseph L. Tedesco, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, N.Y. Garces, Charles R. Eddy

Keywords:

C-Face SiC, Epitaxial Graphene, Graphene Growth

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] J.S. Moon et al., IEEE Electron Dev. Lett. Vol. 31 (2010), p.260.

Google Scholar

[2] J. Kedzierski et al., IEEE Trans. Electron. Dev. Vol. 55 (2008), p. (2078).

Google Scholar

[3] J.L. Tedesco et al., Appl. Phys. Lett. Vol. 96 (2010), p.222103.

Google Scholar

[4] P. Lauffer et al., Phys. Rev. B Vol. 77 (2008), p.155426.

Google Scholar

[5] J.L. Tedesco et al., ECS Trans. Vol. 19 (2009), p.137.

Google Scholar

[6] M.E. Twigg and Y.N. Picard, J. Appl. Phys. Vol. 105 (2009), p.093520.

Google Scholar

[7] J.A. Robinson et al., Nano Lett. Vol. 9 (2009), p.2873.

Google Scholar

[8] J.K. Hite et al., J. Cryst. Growth, submitted (2010).

Google Scholar

[9] T. Straubinger et al., Mater. Sci. Forum Vols. 645-648 (2010), p.3.

Google Scholar

[10] Camara et al., Appl. Phys. Lett Vol. 93 (2008), p.263102.

Google Scholar

[11] Fig. 2 Wide field of view SEM image showing GCBs of various sizes. Images such as these are used to estimate the lower limit of nucleation site density, assuming one site per GCB. B.L. VanMil et al., Mater. Sci. Forum Vols. 615-617 (2009), p.211.

Google Scholar

[12] L.G. Cançado, et al., Appl. Phys. Lett. Vol. 88 (2006), p.163106.

Google Scholar