Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration

Tsubasa Matsumoto; Shin Ichi Nishizawa; Satoshi Yamasaki

doi:10.4028/www.scientific.net/MSF.645-648.247

Paper Titles

Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231

Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
p.235

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
p.239

Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
p.255

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
p.259

Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films
p.263

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Calculation of Lattice Constant of 4H-SiC as a...

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration

Abstract:

Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.