Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

James D. Scofield; Joseph Neil Merrett; Jim Richmond; Anant K. Agarwal; Scott Leslie

doi:10.4028/www.scientific.net/MSF.645-648.1119

Paper Titles

SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
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Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing
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Application of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and Potentials
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Fabrication of SiC JFET-Based Monolithic Integrated Circuits
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Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
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Performance and Reliability of SiC MOSFETs for High-Current Power Modules
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Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
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Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
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Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electrical and Thermal Performance of 1200 V, 100...

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

Abstract:

In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC junction barrier Schottky (JBS) diodes providing the 100 A rating at 200°C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125°C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1119-1122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1119

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Online since:

April 2010

Authors:

James D. Scofield, Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal, Scott Leslie

Keywords:

High Temperature Operation, MOSFET, Packaging, Power Device

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