Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds

Gary Pennington; C.R. Ashman

doi:10.4028/www.scientific.net/MSF.600-603.469

Paper Titles

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
p.465

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
p.473

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
p.477

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
p.481

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
p.485

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Nitrogen Passivation of (0001) 4H-SiC Dangling...

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds

Abstract:

We report a density functional theory study of N and NO passivation of surface dangling bonds at the Si-face of (0001) 4H-SiC. Results agree with many key experimental findings in nitrogen processed devices including: observed interface N coverage and characteristic changes in Dit. Dangling bonds at the SiC surface are fully passivated by 1/3 ML N or NO coverage. Upon passivation the surface is found to incur negligible strain and no reconstruction. Allowing atomic O to interact with the 1/3 ML N or NO passivated surface, we find oxygen prefers to incorporate into SiO2 rather than adsorb to the surface. This indicates the possibility of oxide deposition onto nitrogen passivated (0001) 4H-SiC surfaces.