Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates

Ping Wu; Murugesu Yoganathan; Ilya Zwieback; Yi Chen; Michael Dudley

doi:10.4028/www.scientific.net/MSF.600-603.333

Paper Titles

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349

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Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates

Abstract:

Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results were correlated with those of the synchrotron white beam x-ray topography. Heavily nitrogen-doped SiC shows a significantly different etching behavior in comparison with the low-doped material. This complicates identification of different types of threading defects. In particular, it is difficult to separate Threading Screw Dislocations (TSD) from Threading Edge Dislocations (TED). Depending on the level of doping and thermal history of the crystal, some of the etch pits emerging due to the 1c screw dislocations can be as large as those due to the micropipes.