Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
p.949
p.949
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
p.955
p.955
High Channel Mobility 4H-SiC MOSFETs
p.961
p.961
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal
p.967
p.967
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
p.971
p.971
Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope
p.975
p.975
Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient
p.979
p.979
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
p.983
p.983
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
p.987
p.987
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 527-529)
Pages:
971-974
Citation:
Online since:
October 2006
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