Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

Peter J. Wellmann; Thomas L. Straubinger; Patrick Desperrier; Ralf Müller; Ulrike Künecke; Sakwe Aloysius Sakwe; Holger Schmitt; Albrecht Winnacker; Elisabeth Blanquet; Jean Marc Dedulle; Michel Pons

doi:10.4028/www.scientific.net/MSF.483-485.25

Paper Titles

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
p.9

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
p.31

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
p.35

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
p.39

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
p.43

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Modified Physical Vapor Transport Growth of SiC -...

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

Abstract:

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

25-30

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.25

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Online since:

May 2005

Authors:

Peter J. Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons

Keywords:

Doping, M-PVT Growth, Numerical Modeling

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References

[1] Y.M. Tairov and V.F. Tsvetkov, J. Cryst. Growth 43 (1978), p.209.

Google Scholar

[2] G. Ziegler, P. Lanig, D. Theis, C. Weyerich, IEEE Trans. Electron. Devices 30 (1983), p.277.

Google Scholar

[3] C.H. Carter, Jr., V.F. Tsvetkov, D. Henshall, O. Kordina, K. Irvine, R. Singh, S.T. Allen and J.W. Palmour, Mat. Sci. Engr. B61-62 (1999), p.1.

Google Scholar

[4] T.L. Straubinger, P.J. Wellmann and A. Winnacker; Mat. Sci. Forum Vol. 353-356 (2001), p.33.

Google Scholar

[5] T.L. Straubinger, M. Bickermann, R. Weingaertner, P.J. Wellmann and A. Winnacker; J. Cryst. Growth Vol. 240 (2002), p.117.

Google Scholar

[6] P. Desperrier, R. Müller, A. Winnacker, P.J. Wellmann, Mater. Sci. Forum Vol. 457-460 (2004), p.727.

Google Scholar

[7] O. Kordina, C. Hallin, A. Ellison, A.S. Bakin, I.G. Ivanov, A. Henry, R. Yakimova, M. Touminen, A. Vehanen, and E. Janzen; Appl. Phys. Lett. 69(10) (1996), p.1456.

DOI: 10.1063/1.117613

Google Scholar

[8] D. Chaussande, F. Baillet, L. Charpentier, E. Pernot, M. Pons, R. Madar; J. of the Electroch. Soc. Vol. 150 (2003), p. G653.

DOI: 10.1149/1.1606689

Google Scholar

[9] P. Wellmann, Z. Herro, A. Winnacker, R. Püsche, M. Hundhausen, P. Masri, A. Kulik, M. Bogdanov, S. Karpov, M. Ramm, Y. Makarov, submitted to J. Cryst. Growth.

DOI: 10.1016/j.jcrysgro.2004.11.253

Google Scholar

[10] R. Weingärtner, P.J. Wellmann, M. Bickermann, D. Hofmann, T.L. Straubinger, and A. Winnacker, Appl. Phys, Lett. 80(1) (2002), p.70.

DOI: 10.1063/1.1430262

Google Scholar

[11] A. Ellison, B. Magnusson, P. Bergman, U. Forsberg, N. Henelius, E. Janzén and A. Vehanen; Mat. Sci. Forum Vol. 457-460 (2004), p.9.

DOI: 10.4028/www.scientific.net/msf.457-460.9

Google Scholar

[12] M. Laube, F. Schmid, G. Pensl and G. Wagner; Mater. Sci. Forum Vol. 389-393 (2002), p.791.

Google Scholar

[13] H. -J. Rost, J. Doerschel, K. Irmscher, D. Schulz, D. Siche; J. Cryst. Growth Vol. 257 (2003), p.75.

Google Scholar